发明名称 FOCUS RING FOR PLASMA ETCHING SYSTEM, AND PLASMA ETCHING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a focus ring for significantly reducing the productive yield for a semiconductor integrated circuit and a productive yield, immediately after the usage of the focus ring by preventing failure in etching for a silicon wafer, and provide a plasma etching system, using the focus ring. SOLUTION: In the focus ring for the plasma etching system, concentration of Fe measured in secondary ion mass spectrometry is 1×103 counts or lower, and the plasma etching system using the focus ring is also provided.
申请公布号 JP2002231698(A) 申请公布日期 2002.08.16
申请号 JP20010025651 申请日期 2001.02.01
申请人 HITACHI CHEM CO LTD 发明人 HYAKKI YASUO;KAMATA MITSUJI;SUZUKI TAKAYUKI;ISHII MAKOTO
分类号 H05H1/46;B01J19/08;C04B35/52;H01L21/302;H01L21/3065 主分类号 H05H1/46
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