SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problems in a conventional semiconductor device such as that different properties are required such that the level of current capacity and resistance to deterioration are required in a drive circuit and the reduction of the off current is required in a picture element, and that the leak current due to the light entering the channel is not neglectable in the picture element, in a semiconductor device where a drive circuit and a picture element are made integrally on a substrate. SOLUTION: Gate electrodes 111-113 are made into the stack structure of a first conductive layer 108 and a second conductive layer 109, using different materials, and GOLD regions 120 and 121, in the n-channel TFT of the drive circuit, and LDD regions 124 and 125, in the n-channel TFT of the picture element part, are made separately, without increasing the number of masks, making use of the selection ratio of etching. Furthermore, a lower shading film 102 is made under the channel of the picture element TFT so as to block the light from the rear of the substrate.