| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an Al-Cu alloy wiring which does not generate a defect in the wiring due to a short-circuit. SOLUTION: An Al-Cu alloy wiring is formed by a method where a Ti/TiN laminated film 34, an Al-Cu alloy layer 36 and a TiN/Ti laminated film 38 are deposited on an interlayer insulating film 32, such as an SiO2 film, to form a wiring layer 40. The film 38 is treated with an O2 plasma at 250 deg.C as a preceding treatment before the layer 40 is patterned. The temperature of a wafer stage holding a wafer having the layer 40 treated with the O2 plasma within a chamber of a plasma treatment device is risen to 340 deg.C to perform a 10 minutes' Ar annealing treatment on the wafer. A photoresist film is formed on the film 38 and following the formation, etching masks 42 having each wiring pattern are formed on the photoresist film. The layer 40 is etched by a plasma etching method using the masks 42 to form a wiring structure 44 consisting of the film 34, the layer 36 and the film 38 on a base layer. |
