发明名称 |
APPARATUS FOR LASER ANNEALING |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an apparatus for laser annealing capable of generating a semiconductor film having proper characteristics. SOLUTION: The apparatus for laser annealing comprises a laser optical system, having a laser oscillator for outputting a laser beam inserted of a conventional laser annealing apparatus, capable of activating or crystallizing a semiconductor film of a substrate by irradiating a laser beam, and a substrate support structure for supporting the substrate. An intersection angle between the optical axis of the beam on the irradiation surface of the substrate and irradiation surface orthogonal axis of the substrate is turned to become a prescribed valueδ.</p> |
申请公布号 |
JP2002231655(A) |
申请公布日期 |
2002.08.16 |
申请号 |
JP20010020893 |
申请日期 |
2001.01.30 |
申请人 |
ISHIKAWAJIMA HARIMA HEAVY IND CO LTD |
发明人 |
ISHII MIKITO;NISHIDA KENICHIRO;KAWAGUCHI NORIHITO;MASAKI MIYUKI;YOSHINOUCHI ATSUSHI |
分类号 |
B23K26/00;B23K101/40;H01L21/20;H01L21/268;(IPC1-7):H01L21/268 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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