| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current of a semiconductor device having a MOS transistor. SOLUTION: The semiconductor device according to the present invention, which comprises a semiconductor substrate 1 having an active region and an isolation region, a gate electrode 9 formed on the active region via an oxide film 8, and a pair of impurity ranges formed on either side of the gate electrode 9, is characterized in that the surface of the active region has a round shape over the whole and slants downward as an isolation region approaches. The round shape can be formed by connecting bird's beak parts over the active region when a separation oxide film 5 is formed. |
