P-TYPE OHMIC CONTACT OF NITRIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A p-type ohmic contact of a nitride semiconductor device is provided to decrease a driving voltage, by minimizing a voltage drop between a surface of a GaN and a metal electrode while using a Cr/Ti/Au or Cr/Pt/Au material. CONSTITUTION: The nitride semiconductor device has a general structure including an n-type electrode(260) and a p-type electrode(270). The first metal layer, the second metal layer for preventing mutual diffusion between metal materials and the third metal layer for increasing wire bonding efficiency are sequentially stacked to form a structure of a triple metal layer. The structure of the triple metal layer is used as the p-type electrode.