COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR SEMICONDUCTOR DEVICE WITH GERMANIUM-CONTAINING POLYSILICON GATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A complementary-metal-oxide-semiconductor(MOS) semiconductor device with a germanium-containing polysilicon gate is provided to efficiently prevent gate impurities from being depleted, by making germanium have different effective density in an NMOS transistor region and a PMOS transistor region without a complicated change of a process. CONSTITUTION: The total quantities of germanium contained in a unit area are the same in a polysilicon gate of a PMOS transistor and a polysilicon gate of an NMOS transistor. The distribution of germanium density in the polysilicon gates measured according to a distance from a gate insulation layer(12) are different. The germanium quantity of the polysilicon gate of the PMOS transistor is higher than that of the NMOS transistor in a portion adjacent to the gate insulation layer.