发明名称 IIL SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent an unbalance of base current of the inverter transistor by a method wherein resisters are connected between the bases of a plurality of inverter transistors and the collectors of the driving transistors, respectively. CONSTITUTION:Inverter transistors Q3-Q6 are driven by a driving transistor Q1 and injection transistor Q2. Proper selection of the resistances R3-R6 may cause an equal distribution of the base current of the inverter transistors Q3-Q6.
申请公布号 JPS5662357(A) 申请公布日期 1981.05.28
申请号 JP19790137657 申请日期 1979.10.26
申请人 HITACHI LTD 发明人 USAMI MITSUO
分类号 H01L21/8226;H01L21/331;H01L27/082;H01L29/73;H03K19/091 主分类号 H01L21/8226
代理机构 代理人
主权项
地址