发明名称 GRINDING METHOD FOR GALLIUM* GADOLINIUM* GARNET AND WAFER
摘要 PURPOSE:To grind the outer periphery of the wafer in desired dimensions precisely by a grinding member moving in accordance with the matrix of the wafer. CONSTITUTION:The wafer W is formed by grooving the gallium, gadolinium, garnet and ingot formed through machining in the dimensions obtained by adding a grinding allowance to the outside-diameter dimension of the desired wafer W and the 1st orientation flat (OF) dimension. After the wafer W is held betwen upper and lower boards 4 and 5, a supporting rotary shaft 1 is rotated at a low speed, while the other rotary shaft 2 is rotated at a high speed, and a profile roller 7 is engaged repressively with the matrix 3 formed in the desired dimensions of wafer by the moving operation of the rotary shaft 2 in the radial direction. Simultaneously, when a roller grinder 8 is made to touch the wafer W, the roller grinder 8 moves in accordance with the matrix 3 of the wafer and grinds the wafer W touching the same in the desired dimensions.
申请公布号 JPS5662754(A) 申请公布日期 1981.05.28
申请号 JP19790138308 申请日期 1979.10.26
申请人 SHINETSU CHEMICAL CO 发明人 OGIWARA KESAMI
分类号 H01F41/28;B24B1/00;B24B7/20;B24B17/02;C30B33/00;H01L21/304;H01L21/306 主分类号 H01F41/28
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