| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a polishing composition capable of effectively preventing foulings on a material to be polished with a transition metal such as copper, iron, nickel or chromium and to provide a method for polishing using the polishing composition. SOLUTION: This polishing composition comprises (a) silicon oxide, (b) a basic substance composed of any selected from the group consisting of an inorganic salt of an alkali metal, an ammonium salt, a cyclic amine and ethylenediamine, (c) a chelating agent selected from a compound represented by the general formula [1] [R1 and R2 are each a lower alkylene group; and n is an integer of 0-4] or its salt and (d) water. The method for polishing a semiconductor wafer composed of a single crystal silicon, a polycrystalline silicon or the two kinds thereof comprises using the polishing composition.</p> |
