| 摘要 |
PROBLEM TO BE SOLVED: To provide a quartz crucible which can always maintain nitrogen content in a drawn silicon single crystal ingot homogenously even for different amount of charge, can control the nitrogen content in the ingot and can grow the nitrogen-doped ingot simply. SOLUTION: A silicon nitride film with a thickness of 0.01-5μm is formed on an inner surface, which comes into contact with a silicon melt, of the quartz crucible for growing the silicon single crystal ingot in accordance with a Czochralski method. The first silicon nitride film 11 with a thickness of tA (0.015-5μm) is homogeneously formed on the inner surface of a cylindrical wall 10a of the crucible body part 10. The second silicon nitride film 12 with a thickness of tB (0.01-2μm) which is thinner than tA is homogeneously formed on the inner surface of a bottom part 10b linking to the wall 10a of the crucible body part 10.
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