| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide which decreases an antiphase boundary and/or a warp and a strain which result from an internal stress, to obtain silicon carbide single crystal wherein the antiphase boundary and/or the warp and the strain resulting from the internal stress are decreased and to provide its manufacturing method. SOLUTION: The silicon carbide is manufactured by depositing the silicon carbide on a substrate, of example, from gas phase or liquid phase. The surface of the substrate has a plurality of ups and downs which extend approximately in parallel. Average surface roughness of a center line and an angle of a slope of the ups and downs are 3-1000 nm and 1-54.7 deg., respectively. A slope line made by adjacent cross sections which are orthogonal to the direction in which the ups and downs extend, is in a curve. The substrate is silicon or silicon carbide. Direction of a normal axis of the surface, for example, is <001>. Area ratio of 001} plane to the substrate surface is <10%. Plane defect density and internal stress in the silicon carbide single crystal are <=1000/cm2 and <=100 MPa, respectively.
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