发明名称 |
Double SOI device with recess etch and epitaxy |
摘要 |
The present invention provides various methods for forming a ground-plane SOI device which comprises at least a field effect transistor formed on a top Si-containing surface of a silicon-on-insulator (SOI) wafer; and an oxide region present beneath the field effect transistor, located in an area between source and drain regions which are formed in said SOI wafer, said oxide region is butted against shallow extensions formed in said SOI wafer, and is laterally adjacent to said source and drain regions.
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申请公布号 |
US6432754(B1) |
申请公布日期 |
2002.08.13 |
申请号 |
US20010788979 |
申请日期 |
2001.02.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSADERAGHI FARIBORZ;CHEN TZE-CHIANG;MULLER K. PAUL;NOWAK EDWARD JOSEPH;SADANA DEVENDRA KUMAR;SHAHIDI GHAVAM G. |
分类号 |
H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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