| 摘要 |
A method and apparatus in which the switching of a field-effect transistor is effected by the application of a control voltage suitable for switching to an RC element connected upstream of the gate terminal. The method and apparatus are distinguished by the fact that switching of the field-effect transistor is carried out using a control voltage that at least temporarily only slightly exceeds the threshold voltage via an attenuation circuit which has to be applied to the gate terminal of the field-effect transistor in order to be able to effect switching of the transistor.
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