发明名称 FLAT DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A flat display apparatus is provided in which the number of masks can be reduced when an organic electroluminescent display devices are made in the flat display apparatus and in which a source/drain electrode can be protected from etchant for etching a transparent metal to form an anode. CONSTITUTION: A buffer layer(150) is formed on an upper surface of an insulation substrate(10) to prevent an introduction of impurity created in the insulation substrate(10). The buffer layer(150) is coated with amorphous polysilicon which in turn is patterned to form a semiconductor layer(112). Then, SiNx substance is coated on the semiconductor layer(112) and the buffer layer(150) to form the first insulation film(152) electrically insulating the semiconductor layer(112) from an upper layer. A gate metal is deposited on the first insulation film(152), which in turn is patterned to form a gate electrode(134) at a portion corresponding to the semiconductor layer(112). An insulation material is coated on the insulation substrate(10), and then the second insulation film(154) is formed to insulate the gate electrode(134) from the upper layer, which is used as dielectric. A transparent metal, for example ITO metal is deposited on the second insulation film(154), in which an anode(260) is formed to apply a plus electricity to a desired portion at which an organic electroluminescent device(250) is formed. Contact holes having a desired diameter is formed in the second insulation film(154) to expose the semiconductor layer(112). Source/drain metal is deposited on the second insulation film(154) is deposited and etched to form source/drain electrodes(136,138) at sides of the gate(134) in the second insulation film(154). The source electrode of a second thin film transistor(130) is connected at an end to an electric wire and at the other end to the semiconductor layer(136). A flat protection film(156) is formed to cover the source/drain(136,138), and the anode(260) in order to protect the thin film transistors and capacitors. A contact hole is formed in the flat protection film(156) on which in turn organic material having a certain color is coated to a light emitting device radiating light as electric current is supplied to the light emitting device.
申请公布号 KR20020065225(A) 申请公布日期 2002.08.13
申请号 KR20010005649 申请日期 2001.02.06
申请人 SAMSUNG SDI CO., LTD. 发明人 KIM, GEUM NAM
分类号 G09G3/30;(IPC1-7):G09G3/30 主分类号 G09G3/30
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