| 摘要 |
PURPOSE:To easily obtain a memory cell suitable for high integration by enabling to form an accumulation capacitor by means of a capacitor of an Si dioxide film formed between a polycrystalline Si and a substrate Si. CONSTITUTION:In case of memorizing charges, they are accumulated from a diffused layer 32 connected to a bit line to the polycrystalline Si 25 formed in the substrate 21 by turning on a switching transistor connected to a word line, resulting in memory state. This memory capacitor is formed of the capacitor of the Si dioxe film 24 formed between the Si 25 and the substrate 21. In other words, the capacitor is formed on both sides of the Si 25. Thereby, the accumulation capacitance becomes extremely large. |
