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发明名称
Partially silicide diode and method of manufacture
摘要
申请公布号
AU2002225999(A1)
申请公布日期
2002.08.12
申请号
AU20020225999
申请日期
2001.12.03
申请人
ADVANCED MICRO DEVICES, INC.
发明人
WILLIAM G. EN;DONG-HYUK JU;STEPHEN G. BEEBE
分类号
H01L27/02;H01L27/12;H01L29/417;H01L29/861;(IPC1-7):H01L27/02
主分类号
H01L27/02
代理机构
代理人
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地址
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