发明名称 |
MARKING METHOD FOR INITIAL DEFECTIVE BLOCK, DETECTING METHOD, AND SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a control method for a defective block by which a defective block is easily controlled and to provide a semiconductor memory. SOLUTION: A method for marking an initial defective block at the time of shipping semiconductor memories, in which a memory region is divided into a plurality of blocks and which has an ECC function, includes a stage where an initial defective block is detected and an ECC code becoming an ECC error for a specific region of the initial defective block is written. |
申请公布号 |
JP2002222599(A) |
申请公布日期 |
2002.08.09 |
申请号 |
JP20010017603 |
申请日期 |
2001.01.25 |
申请人 |
FUJITSU LTD |
发明人 |
FURUKAWA HIDEYUKI |
分类号 |
G06F12/16;G06F11/10;G11C16/02;G11C16/06;G11C29/04;G11C29/42;G11C29/44;H01L21/822;H01L27/04 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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