发明名称 MARKING METHOD FOR INITIAL DEFECTIVE BLOCK, DETECTING METHOD, AND SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a control method for a defective block by which a defective block is easily controlled and to provide a semiconductor memory. SOLUTION: A method for marking an initial defective block at the time of shipping semiconductor memories, in which a memory region is divided into a plurality of blocks and which has an ECC function, includes a stage where an initial defective block is detected and an ECC code becoming an ECC error for a specific region of the initial defective block is written.
申请公布号 JP2002222599(A) 申请公布日期 2002.08.09
申请号 JP20010017603 申请日期 2001.01.25
申请人 FUJITSU LTD 发明人 FURUKAWA HIDEYUKI
分类号 G06F12/16;G06F11/10;G11C16/02;G11C16/06;G11C29/04;G11C29/42;G11C29/44;H01L21/822;H01L27/04 主分类号 G06F12/16
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