| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method in which generation of cracks is suppressed in the inter-insulation layer under a wiring layer that a pad opening reaches. SOLUTION: This semiconductor device is provided with a protective insulation layer 50, the pad opening 60 provided in the protective insulation layer 50, and the wiring layer that the pad opening ends at. First and second wiring layers 30 and 32 are provided on a level below the wiring layer 40 that the pad opening ends at. The first and second wiring layers 30 and 32 at the level below the wiring layer 40 that the pad opening ends at are formed on the outside of the area of the pad opening 60 in a plane view. |
