发明名称 |
SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which facilitates the formation of an optical resonator surface in a semiconductor laser or the like and to provide a method of manufacturing the element. SOLUTION: A 0.1μm thick Si film 2 is formed on a 300μm thick sapphire substrate 1 being formed a surface C as its main surface and nitride compound semiconductor layers are stacked on the film 2 into the structure of a semiconductor laser. After the substrate 1 is polished, the substrate 1 is divided in the plane direction vertical to the substrate 1, whereby an optical resonator surface in the laser is manufactured.
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申请公布号 |
JP2002222769(A) |
申请公布日期 |
2002.08.09 |
申请号 |
JP20010019548 |
申请日期 |
2001.01.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OGAWA MASAHIRO |
分类号 |
H01L21/205;H01S5/10;H01S5/323;H01S5/343;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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