发明名称 SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING IT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element which facilitates the formation of an optical resonator surface in a semiconductor laser or the like and to provide a method of manufacturing the element. SOLUTION: A 0.1μm thick Si film 2 is formed on a 300μm thick sapphire substrate 1 being formed a surface C as its main surface and nitride compound semiconductor layers are stacked on the film 2 into the structure of a semiconductor laser. After the substrate 1 is polished, the substrate 1 is divided in the plane direction vertical to the substrate 1, whereby an optical resonator surface in the laser is manufactured.
申请公布号 JP2002222769(A) 申请公布日期 2002.08.09
申请号 JP20010019548 申请日期 2001.01.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OGAWA MASAHIRO
分类号 H01L21/205;H01S5/10;H01S5/323;H01S5/343;(IPC1-7):H01L21/205 主分类号 H01L21/205
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