发明名称 |
Poröses dielektrisches Material mit verbesserten Porenoberflächen für elektronische Anwendungen |
摘要 |
This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample. <IMAGE> <IMAGE> |
申请公布号 |
DE69524675(T2) |
申请公布日期 |
2002.08.08 |
申请号 |
DE1995624675T |
申请日期 |
1995.06.23 |
申请人 |
TEXAS INSTRUMENTS INC., DALLAS |
发明人 |
CHO, CHIH-CHEN;GNADE, BRUCE E.;SMITH, DOUGLAS M. |
分类号 |
H01L21/768;H01L21/316;H01L21/469;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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