发明名称 |
Nanotopography removing method |
摘要 |
To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has been regarded as impossible to remove conventionally, a half value width of an etching profile of activated species gas is set to fall in a range equal to or smaller than a wavelength a of nanotopography and equal to or larger than a half thereof. Based on previously measured data of nanotopography, moving speed and locus of injected activated species gas along a surface of a semiconductor wafer are calculated and controlled.
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申请公布号 |
US2002104825(A1) |
申请公布日期 |
2002.08.08 |
申请号 |
US20020062494 |
申请日期 |
2002.02.05 |
申请人 |
YANAGISAWA MICHIHIKO;OKUYA TADAYOSHI |
发明人 |
YANAGISAWA MICHIHIKO;OKUYA TADAYOSHI |
分类号 |
H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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