Dissipating heat from semiconductor devices

摘要

A semiconductor wafer is thinned to form a membrane 11 with thicker regions 13 providing structural support and an active region 10 is formed in the membrane. An electrically insulating heat dissipating diamond layer 20 is formed over the back of the device. Alternatively, boron nitride, aluminium nitride, or aluminium oxide may be used as heat dissipating layers. The device may be configured for use with conventional and SOI substrates (see figure 1b).