发明名称 High density interconnect multichip module stack and fabrication method
摘要 A method for fabricating a substrate package for a high density interconnect multichip module stack comprises: providing a substrate having holes extending therethrough and having a bottom surface with metallization situated thereon; providing a metal sheet having grooves extending therethrough; attaching the metal sheet to the bottom surface of the substrate; attaching metal plugs through the holes to the metal sheet; and removing portions of the substrate to expose the metal plugs and separate the metal sheet into a plurality of segments defined by the grooves.
申请公布号 US6429381(B1) 申请公布日期 2002.08.06
申请号 US20010681555 申请日期 2001.04.27
申请人 GENERAL ELECTRIC COMPANY 发明人 SAIA RICHARD JOSEPH;WOJNAROWSKI ROBERT JOHN;WEAVER, JR. STANTON EARL;DUROCHER KEVIN MATTHEW;KAPUSTA CHRISTOPHER JAMES;SABATINI JAMES ENRICO
分类号 H01L23/367;H01L23/48;H01L25/065;H05K1/03;H05K3/00;H05K3/32;H05K3/40;H05K3/46;(IPC1-7):H05K1/03 主分类号 H01L23/367
代理机构 代理人
主权项
地址
您可能感兴趣的专利