Integrated circuits protected against reverse engineering and method for fabricating the same using etched passivation openings in passivation layer

摘要

Semiconducting devices, including integrated circuits, protected from reverse engineering comprising passivation openings made in a passivation layer. When a reverse engineer etches away the passivation layer, underlying metal layers and/or other elements of the device are destroyed making the reverse engineering impossible. Top metal layer may remain intact. A method for fabricating such devices.