| 摘要 |
Methods are disclosed for manufacturing reticle blanks useful for forming reticles used in charged-particle-beam microlithography. The reticle blanks are formed that comprise support struts having sharply defined, vertical sidewalls without "icicles" being formed near or on the sidewalls. According to an exemplary method, an SOI (silicon-on-insulator) substrate is formed from a silicon support substrate, a silicon oxide layer on a first major surface of the silicon support substrate, and an SOI layer formed on the silicon oxide layer. A dry-etching mask is formed on a second major surface of the silicon support substrate. The mask defines windows in positions between which struts are to be formed. The dry-etching mask comprises a thin (desirably 1 mum to 2 mum thick) silicon oxide layer and a resist layer. The windows are dry-etched to form the struts, and the silicon oxide layer is removed. |
