发明名称 |
Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration |
摘要 |
A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
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申请公布号 |
US6430015(B2) |
申请公布日期 |
2002.08.06 |
申请号 |
US20010773743 |
申请日期 |
2001.02.02 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
JU KOCHAN;CHEN MAO-MIN;HORNG CHENG T.;CHANG JEI-WEI |
分类号 |
G11B5/31;G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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地址 |
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