发明名称 Laser method for forming vias
摘要 A laser method for forming vias comprises: providing a heat sink; locally oxidizing a surface of the heat sink into a copper oxide film; bonding a substrate onto the heat sink at the copper oxide layer locations, wherein the substrate comprises at least a patterned trace layer and an insulating layer to which is bonded the heat sink, the insulating layer comprising a plurality of through holes that expose the portions of the copper oxide film; removing the copper oxide exposed through the through holes by laser beam; disposing a plurality of solder balls respectively in the through holes; and reflowing the solder balls to form a plurality of vias.
申请公布号 US6429049(B1) 申请公布日期 2002.08.06
申请号 US20010874154 申请日期 2001.06.05
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 LEE CHUN-CHI;HSIEH JAW-SHIUN;FENG YAO-HSIN;WU SHYH-ING;LIAO KUAN-NENG;TIEN CHIN-PEI
分类号 H01L21/48;H01L23/498;H05K3/00;H05K3/34;H05K3/38;H05K3/40;H05K3/44;(IPC1-7):H01L21/44 主分类号 H01L21/48
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