发明名称 |
Laser method for forming vias |
摘要 |
A laser method for forming vias comprises: providing a heat sink; locally oxidizing a surface of the heat sink into a copper oxide film; bonding a substrate onto the heat sink at the copper oxide layer locations, wherein the substrate comprises at least a patterned trace layer and an insulating layer to which is bonded the heat sink, the insulating layer comprising a plurality of through holes that expose the portions of the copper oxide film; removing the copper oxide exposed through the through holes by laser beam; disposing a plurality of solder balls respectively in the through holes; and reflowing the solder balls to form a plurality of vias.
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申请公布号 |
US6429049(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20010874154 |
申请日期 |
2001.06.05 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
LEE CHUN-CHI;HSIEH JAW-SHIUN;FENG YAO-HSIN;WU SHYH-ING;LIAO KUAN-NENG;TIEN CHIN-PEI |
分类号 |
H01L21/48;H01L23/498;H05K3/00;H05K3/34;H05K3/38;H05K3/40;H05K3/44;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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