| 摘要 |
A line beam is irradiated such that edge lines of the beam extend in a direction at an angle of 45° with respect to the vertical direction or the horizontal direction. As a result, a laser defective crystallization region R' where the grain size has not become sufficiently large due to unevenness in intensity of the line beam passes at 45° across the carrier path connecting source and drain regions S and D to each other. The defective crystallization region R' thus does not completely divide between the contact region CT, i.e., the carrier path between the source and drain regions. Therefore, a carrier path CP can be securely maintained without passing through the defective crystallization region R', so that the ON-current is prevented from being reduced. Deterioration or unevenness in transistor characteristics caused by unevenness in intensity of laser irradiation can thus be prevented.
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