| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a substrate floating effect is inhibited and to provide its manufacturing method. SOLUTION: The semiconductor device has an element isolation region 14 formed on an SOI substrate 10, an n-p-n type bipolar transistor 200 and a p-type field-effect type transistor 100. The bipolar transistor 200 and the field-effect type transistor 100 are formed in the same element forming region 16. An n-type body region 52a and an n-type collector region 230 are connected electrically. A p-type source region 210 and the n-type collector region 230 are connected electrically. The p-type drain region 230 and a p-type base region 220 are connected electrically.
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