发明名称 LASER ANNEALING METHOD AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a laser annealer that can suppress the generation of ablation during annealing. SOLUTION: The time-varying waveform of an excimer laser beam has two or three pulses. An excimer laser beam is irradiated that has a waveform in which the area of a first pulse 45 that appears first occupies 55% or more of the total area of the pulse 45, a pulse 46, and a pulse 47. If the area of the first pulse 45 is less than 55% of the total area of the pulses 45, 46, and 47, the reaching temperature of the amorphous silicon melted by the excimer laser beam is lowered. The solidification time of the amorphous silicon varies. The amount of impurities deposited on the grain boundary increases and ablation is generated. The amorphous silicon on a glass substrate is annealed into polysilicon. The ablation generated during annealing can be suppressed.
申请公布号 JP2002217104(A) 申请公布日期 2002.08.02
申请号 JP20010006989 申请日期 2001.01.15
申请人 TOSHIBA CORP 发明人 MIHASHI HIROSHI;NAKAMURA ATSUSHI
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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