发明名称 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND METHOD FOR DISPOSING ANISOTROPIC CONDUCTING FILM
摘要 PROBLEM TO BE SOLVED: To prevent peeling of an anisotropic conducting film which is to be generated, simultaneously with peeling of a protective film of the anisotropic conducting film, in flip-chip mounting using the anisotropic conducting film. SOLUTION: Bonding strength is increased by forming a pattern 4 for bonding in a belt type on a peripheral part in a region on which the anisotropic conducting film 3 is stuck. The same material as that of electrode patterns 2, which are wired in a region on which a bare IC is to be mounted, is used as material of the pattern 4, so that the height of the pattern 4 is made identical to that of the electrode patterns 2, contact area between a substrate 1 and the anisotropic conducting film 3 is enlarged, and bonding strength is increased.
申请公布号 JP2002217527(A) 申请公布日期 2002.08.02
申请号 JP20010014161 申请日期 2001.01.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NOBUSADA SHIYUNEI
分类号 H05K3/32;H01L21/60;H05K1/18;(IPC1-7):H05K3/32 主分类号 H05K3/32
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