发明名称 |
SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the dark current in a MOS solid-state imaging device. SOLUTION: The solid-state imaging device comprises a pixel 2 provided with a photodiode PD, a detection part N, and a transfer transistor QT by which an electric charge stored in the photodiode PD is transferred to the detection part N. The gate voltage of the transfer transistor QT at a time when the electric charge is stored in the photodiode PD is set as a negative voltage.</p> |
申请公布号 |
JP2002217397(A) |
申请公布日期 |
2002.08.02 |
申请号 |
JP20010006657 |
申请日期 |
2001.01.15 |
申请人 |
SONY CORP |
发明人 |
MABUCHI KEIJI;UENO TAKAHISA |
分类号 |
H01L27/146;H01L27/148;H04N5/335;H04N5/341;H04N5/359;H04N5/361;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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