发明名称 SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To reduce the dark current in a MOS solid-state imaging device. SOLUTION: The solid-state imaging device comprises a pixel 2 provided with a photodiode PD, a detection part N, and a transfer transistor QT by which an electric charge stored in the photodiode PD is transferred to the detection part N. The gate voltage of the transfer transistor QT at a time when the electric charge is stored in the photodiode PD is set as a negative voltage.</p>
申请公布号 JP2002217397(A) 申请公布日期 2002.08.02
申请号 JP20010006657 申请日期 2001.01.15
申请人 SONY CORP 发明人 MABUCHI KEIJI;UENO TAKAHISA
分类号 H01L27/146;H01L27/148;H04N5/335;H04N5/341;H04N5/359;H04N5/361;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L27/146 主分类号 H01L27/146
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