| 摘要 |
PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus, for example, in which a evaporated material is deposited on a wafer surface with its semiconductor wafer, i.e., a work to be deposited, being rotated around an evaporation source, as well as, a step coverage is fine and a recessed part is eliminated, and a yield is improved even if there is a step-like part on the wafer surface. SOLUTION: A metal thin film is formed by depositing the evaporation material from the evaporation source on the wafer surface having the step part of the semiconductor wafer 7 which is attached on a dome revolving an rotating for the evaporation source in a chamber 1 drawn almost in vacuum. The semiconductor wafer 7 is rotativebly attached on the dome 3, and the vacuum deposition apparatus A is equipped with a rotation-driving means for rotating the semiconductor wafer 7.
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