METHOD FOR FORMING SILICON NITRIDE MONOMOLECULAR LAYER FILM

摘要

PROBLEM TO BE SOLVED: To provide a method, for forming a silicon nitride film of a flat monomolecular layer in molecular size on a silicon surface, in high reproducibility at high efficiency without using a special apparatus. SOLUTION: A silicon substrate is exposed to a reaction gas for nitriding through a heating reaction so that a silicon nitride film is formed on the silicon substrate, where a hydrogen gas is added to the reaction gas for the nitriding.