| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD IN WHICH CONTACT HOLE IS FILLED WITH SILICON HAVING LOW IMPURITY CONCENTRATION |
| 摘要 |
A semiconductor device includes a silicon layer. The silicon layer includes a lower silicon layer and an upper silicon layer which is formed on the lower layer. A concentration of impurities in the upper silicon layer is higher than that of the lower silicon layer.
|
| 申请公布号 |
US2002102789(A1) |
申请公布日期 |
2002.08.01 |
| 申请号 |
US20000497861 |
申请日期 |
2000.02.04 |
| 申请人 |
YO SHOHI |
发明人 |
YO SHOHI |
| 分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/469;H01L21/31;H01L21/824;H01L29/76;H01L29/94 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
