| 摘要 |
A thin film transistor (TFT) and method of fabricating the same. A planarization layer of polymer is formed on the interlayer to reduce short-circuit. The planarization layer further reduces the capacitance of the crossover capacitor and the delay time of the LCD panel using the TFT is therefor minimized. A gate thereof can be design under the data line to increase aperture ratio.
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