SEMICONDUCTOR INTEGRATED CIRCUIT AND FABRICATION PROCESS THEREFOR

摘要

A semiconductor integrated circuit is provided which includes bump electrodes having a uniform height. The semiconductor integrated circuit includes: a semiconductor substrate (wafer) having a plurality of bump electrode formation areas and a bump electrode non-formation area respectively defined on a front surface thereof; a first electrode pad formed in the bump electrode non-formation area; a second electrode pad formed in each bump electrode formation area; and a bump electrode formed on each second electrode pad; wherein the first electrode pad is used for supplying a plating electric current to the second electrode pads through the semiconductor substrate in formation of the bump electrodes by electrolytic plating.