发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <p>The current Id flowing through a line of a DC high-voltage power supply (HV) when a high-frequency power supply (RF) is turned on and integrated so as to determine the change of charge ΔQ. The voltage Vdc of the wafer (W) is determined from the change of charge ΔQ. Thus, the potential of a work in a plasma is accurately determined with a simple structure.</p>
申请公布号 WO2002059954(P1) 申请公布日期 2002.08.01
申请号 JP2002000311 申请日期 2002.01.18
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