发明名称 |
Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof |
摘要 |
An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 mum or less; an aggregate size of the sintering additive component present on the machined surface is 20 mum or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.
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申请公布号 |
US2002102441(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20010000953 |
申请日期 |
2001.12.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHINOSAWA KATSUHIRO;SHIRAI TAKAO;NAKAYAMA NORITAKA |
分类号 |
C04B35/581;C04B41/90;H05K1/03;(IPC1-7):B32B9/00;B05D3/10 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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