发明名称 Aluminum nitride substrate and thin film substrate therewith, and manufacturing method thereof
摘要 An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 mum or less; an aggregate size of the sintering additive component present on the machined surface is 20 mum or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.
申请公布号 US2002102441(A1) 申请公布日期 2002.08.01
申请号 US20010000953 申请日期 2001.12.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHINOSAWA KATSUHIRO;SHIRAI TAKAO;NAKAYAMA NORITAKA
分类号 C04B35/581;C04B41/90;H05K1/03;(IPC1-7):B32B9/00;B05D3/10 主分类号 C04B35/581
代理机构 代理人
主权项
地址