| 摘要 |
A method is provided to improve uniformity between the channel characteristics of multiple sets of thin film transistors (TFTs) formed with different orientations on a polycrystalline film. The method is well suited to the production of TFTs for use as drivers on liquid crystal display devices, as well as other devices. TFT channels are formed over a polycrystalline region on a substrate such that the predominant crystal orientation of the polycrystalline region is a compromise orientation between an ideal orientation for one set of TFTs and an ideal orientation for another set of TFTs. In one preferred embodiment, where a set of row drivers and a set of column drivers are 90 degrees relative to each other, the predominant crystal orientation would be at approximately 45 degrees relative to both set of drivers.
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