PROCESS FOR ETCHING BURIED CAVITIES WITHIN SILICON WAFERS

摘要

A silicon element having macrocavities (60) beneath its exterior surface (12) is fabricated by electrochemical etching of a p-tpye silicon wafer (10). Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.