发明名称 |
Microelectronic interconnect material with adhesion promotion layer and fabrication method |
摘要 |
A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.
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申请公布号 |
US2002102838(A1) |
申请公布日期 |
2002.08.01 |
申请号 |
US20020060548 |
申请日期 |
2002.01.30 |
申请人 |
CVC PRODUCTS, INC., A DELAWARE CORPORATION |
发明人 |
PARANJPE AJIT P.;MOSLEHI MEHRDAD M.;RELJA BORIS;BUBBER RANDHIR S.;VELO LINO A.;OMSTEAD THOMAS R.;CAMPBELL DAVID R.;LEET DAVID M.;GOPINATH SANJAY |
分类号 |
H01L21/285;H01L21/4763;H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/285 |
代理机构 |
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主权项 |
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地址 |
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