| 摘要 |
A semiconductor device having a complementary logic gate including a field effect transistor (101) with a first conductivity type channel, a first conductivity type well region (202) formed in a semiconductor substrate (102), a second conductivity type channel layer (203) formed in its skin layer, a first wiring (112) connecting one end (204) of the second conductivity type channel layer (203) to a first conductivity type drain region (106), a second wiring (208) connecting the other end (205) of the second conductivity type channel layer (203) to a first power source, and a third wiring (208) connecting the well region (202) to a second power source having the same polarity as ht of the first power source, wherein a threshold voltage is easy to control at a low power consumption to avoid an increase in the number of manufacturing steps.
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