| 摘要 |
<p>In an MRAM, a current with high current density flows in a line in write operation. When write operation is to be performed with respect to a memory cell (MC) existing at the intersection of a write word line (WWL0) and a bit line (BL0), a current flows in the write word line (WWL0) from a WWL driver (13) to a voltage down converter (20). Thereafter, a current flows in the write word line (WWL0) in a direction opposite to the direction of the current flowing in the write operation, i.e., from the voltage down converter (20) to the WWL driver (13). The same applies to a bit line (BL0, BL1). For example, after write operation, a current flows in the bit line (BL0, BL1) in a direction opposite to the direction of a current flowing in the write operation.</p> |
