METHOD FOR FORMING BISMUS SYSTEM FERROELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a Bi system ferroelectric thin film in which phenomena such as surface roughening and clouding are not caused to the surface of a coating film after a coating step and a ferroelectric thin film having high dielectric strength and uniformity of electrical characteristics in the surface of a substrate can be formed on the substrate. SOLUTION: In the method for forming a Bi system ferroelectric thin film, the top of a substrate is coated with a coating liquid for forming the Bi system ferroelectric thin film in an atmosphere at 30-50% relative humidity and firing is carried out.