Method of erasing a flash memory device

摘要

A method of erasing a flash memory device performs erase operation by hot carrier injection method, by applying a ground potential to a source and applying the bias from a high voltage to a low voltage step by step, with a voltage of 5V being applied to a drain, wherein the bias of a floating gate in the flash memory device keeps 1.8 through 2V. being hot carrier injection condition and wherein the gate bias adjusts the bias applied according to the coupling ratio. Thus, it can reduce the erase time and allows the erase on a byte basis.