发明名称 Kerf contact to silicon redesign for defect isolation and analysis
摘要 A method and structure for an integrated circuit technology segment test structure including a plurality of technology test structures connected together as a chain of elements and a plurality of externally probable regions positioned along said chain of elements, said externally probable regions being positioned so as to enable location of a failed test structure.
申请公布号 US6426516(B1) 申请公布日期 2002.07.30
申请号 US19990375138 申请日期 1999.08.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 SLOMAN DAVID E.
分类号 H01L23/544;(IPC1-7):H01L23/58 主分类号 H01L23/544
代理机构 代理人
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