| 发明名称 |
Group III nitride compound semiconductor device |
| 摘要 |
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
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| 申请公布号 |
US6426512(B1) |
申请公布日期 |
2002.07.30 |
| 申请号 |
US20000518724 |
申请日期 |
2000.03.03 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
ITO JUN;CHIYO TOSHIAKI;SHIBATA NAOKI;WATANABE HIROSHI;ASAMI SHIZUYO;ASAMI SHINYA |
| 分类号 |
H01L33/00;(IPC1-7):H01L29/06 |
主分类号 |
H01L33/00 |
| 代理机构 |
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