发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a novel semiconductor light emitting element suitable for use as a white LED. SOLUTION: An underlying layer 2 constituting a semiconductor light emitting element 10 comprises a high crystallinity AlN layer having a half peak width of 90 sec or less in X-ray locking curve. The underlying layer 2 is added with a specified rare earth element. The rare earth element is stimulated by the light emitted from an emission layer 5 to emit light in wavelength characteristic to the rare earth element. |
申请公布号 |
JP2002208731(A) |
申请公布日期 |
2002.07.26 |
申请号 |
JP20010001149 |
申请日期 |
2001.01.09 |
申请人 |
NGK INSULATORS LTD |
发明人 |
HORI YUJI;SHIBATA TOMOHIKO;TANAKA MITSUHIRO;ODA OSAMU |
分类号 |
C23C16/34;H01L21/20;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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